Scientists have proposed to reduce transistor gate to 1 nm

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POSTER: computer news   ||   SCIENTISTS HAVE PROPOSED TO REDUCE TRANSISTOR GATE TO 1 NM	DATE:2016-10-16
A group of researchers from the Laboratory in Berkeley Lawrence proposed structure transistor, the gate of which the dimensions are reduced to 1 nm.  This is also one of the options to can continue Moore's Law, after the usual silicon stops moving the development of electronic components.  The shutter "1-nm transistor" is selected ordinary carbon nanotube.  Prior to that, for example, carbon nanotubes are proposed for use as a channel transistors because they have the best performance for the movement of electrons in a rapidly shrinking channels.  But the use of carbon nanotubes as transistor gates  no one seriously suggested, because in similar circumstances, they generate a very weak intensity of the electromagnetic field, which is not able to stop the current flow in the channel. For carbon nanotubes in the following structure was created as a transistor gate. As the transistor channel between source and drain unused material such as molybdenum disulfide (MoS2). During the passage of current through the channel of MoS2 effective electron mass increases. It should be emphasized that the tests with a "1-nm transistor" is in the early stages. The thickness of the ZrO2 film is reduced to 0.65 nm, which is also associated with technological challenges. In general, scientists have proved that the proposed concept is quite efficient. Related Products :

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