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This year, NXP will release at least 5 SoC using the FD-SOI technical process


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This year, NXP will release at least 5 SoC using the FD-SOI technical process


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POSTER: computer news   ||   THIS YEAR, NXP WILL RELEASE AT LEAST 5 SOC USING THE FD-SOI TECHNICAL PROCESS

DATE:2017-04-14

The chip manufacturing process on plates of fully depleted silicon on the insulator (FD-SOI) allows to obtain chips with better characteristics without lowering the scale of technological norms: faster and with less consumption.  The use of FD-SOI plates is planned by Samsung and GlobalFoundries.  More precisely, Samsung already produces advanced solutions for FD-SOI using 28-nm process standards.  The company GlobalFoundries using FD-SOI will produce 22-nm solutions (22FDX), but this will happen later in 2018 or in 2019 (the exact terms in the company refused to name).  We add that Samsung licensed the use of the technological process using FD-SOI plates from STMicroelectronics.

A serious bet on FD-SOI was made by NXP.  This year, it will release at least five single-chip i.MX circuits on FD-SOI (four on 64-bit ARMv8 cores and an 32-bit ARMv7 bit).  The release of solutions will deal with Samsung.  Over the next two years, a number of SoC NXP will be released on FD-SOI plates, with the ability to increase the performance of flagships by 25% each time, which would not be possible in the case of manufacturing chips on conventional monolithic silicon wafers.  In the future, GlobalFoundries promises to do the production of solutions.  Now it is not ready to talk about commercial 22nm FD-SOI products, but says that it expects at least 70 projects at first.  The table below shows a comparison of the characteristics of the 22nm FD-SOI technical process of GlobalFoundries and the related technological processes of TSMC (producer A) and Intel (producer B).

Switching to FD-SOI, for example, promises to squeeze the budget for 802.11n Wi-Fi power in the version with one antenna to the budget level of the standard Zigbee.  The latter, in particular, allows devices with wireless connection for years to work from one battery.  In addition, the use of FD-SOI makes it possible to produce with better characteristics of digital-to-analog converters and to integrate radio components into the same crystal as the other circuits.  One more example.  Prepared by NXP for production, the single-chip "FD-SOI" circuit for an automotive on-board system can simultaneously serve six screens with a resolution of 1080p and operates without active cooling at the same time.  In this mode, the processor based on other current technological processes would simply fail.

The main problem for further development of technical processes using FD-SOI plates was that the built-in non-volatile memory also needs to be scaled, and NAND-type memory, as we know, is economically unprofitable to produce with the norms less than 15/16 nm.  For FD-SOI with the norms of 12 nm (for GlobalFoundries) and 14 nm (for Samsung), flash memory of a different type is needed.  It can be resistive memory, magnetoresistive with the use of tunnel effects or some other type of memory.  So, the problem is that new memory for embedded solutions must be selected within two years, otherwise the introduction of the following in terms of the scale of the technical processes will face serious difficulties.


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This year, NXP will release at least 5 SoC using the FD-SOI technical process


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