Qimonda company reported this week that they mastered the DDR3 memory production on 46 nm technology. Samsung company decided to make the respective answer, and also reported about the release of DDR-2 memory, released on 40 nm technology. DDR 2-800 memory modules in the design concept SO-DIMM passed Intel approval to compatibility with Intel GM45 chipset.
Savings due to reduction in the energy consumption reach 30%, if we compare new memory with predecessors, released on 50 nm technology. Furthermore, the thinner technical process allows to obtain up to 60% more microcircuits from one silicic plate. Samsung is assembled to approach the production of DDR- 3 microcircuits with 40 nm technology to the end of 2009.
According to samsung estimations , this technical process will allow the company to approach the development of highly productive memory following generation, for example, DDR-4. Related Products :
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