Samsung company already demonstrated DDR 2-800 memory released on 40 nm technology. Samsung will use this technology with the production of DDR- 3 memory not earlier than the end of the present year.
Another important memory producer , hynix semiconductor company, yesterday declared about DDR3 memory microcircuits with one gigabit density, released on 40 nm technology. This memory must be approved by Intel company.
New generation Hynix memory can work in the regimes up to DDR 3-2133 . From one silicic plate hynix obtains one and half times more microcircuits, than 50 nm technology. The technology three-dimensional transistor allows to reduce the currents leakage and overall memory energy consumption level . Mass DDR3 memory production with 1 Gbit density on 40 nm technology will start in the third quarter of the present year.
Hynix expects to transfer on 40 nm technical process the production of other memory types .