Micron technology company reported about the creation of first DDR3 memory modules with the reduced load on the bus(load-reduced, dual-inline memory module, LRDIMM). The company expects to represent models with 16 GB volume to autumn this year. The new modules are intended for servers. Due to the load decrease on the memory bus, micron modules LRDIMM allows to increase the transmission speed and increase the volume capacity , installed in the system.
In the modules are used memory microcircuits from micron production . They are designed for the supply voltage 1,35 V. The microcircuits are produced according to the 50 nm standards, 2 Gbit. At present, the company prepares to begin large-scale production of such microcircuits. In order to decrease the load on the bus, in the modules LRDIMM micron instead of usual register buffer is used insulating buffer microcircuit for inphi production (iMB). In comparison with today modules this RDIMM allows to decrease the load by 50% in case of two-rank module and by 75% - in case of four-rank module.
Instead of three four-rank modules RDIMM with 16 GB volume , in server it is possible to install up to nine four-rank modules LRDIMMS with the same volume, after increasing the total storage capacity from 48 to 144 GB. Concerning the performance, according to micron estimation , the modules LRDIMM with 16 GB volume ensures increase in the memory bandwidth up to 57% in comparison with RDIMM modules .