Samsung PRAM

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POSTER: pc hardware news   ||   SAMSUNG PRAM	DATE:2006-09-12
flash memory producer develop in both direction : increasing the writing  capacity and the reading speed - record. As a result at the market regularly appear  more capacious and higher-speed "flash-disk", the storage price of one mega-byte was systematically  reduced. Company Samsung made a breakthrough in the technology of memory  production .This  Korean company developed a new type of memory - PRAM (Phase-change Random Access Memory). Samsung is working on memory model of this type, which has capacity of 512 megabite. Producer  is confident, that n ext years PRAM will replace all  traditional memory  type . Contrary to NOR flash, the memory of  type PRAM does not erase  data before  writing  above the new. This ensures the PRAM speed advantage in record on the order of 30 times. Reliability  in PRAM is also higher - accumulators on its basis can  work ten times longer. Cells PRAM have doubly smaller area, and the number of stages in the technical process of their production is less by 20%. This will ensure the reduction in the prime cost of production and selling price. The first products on basis of PRAM will get on the market in the beginning of 2008. First new memory will come in the cell phones and other portable devices, for which the speed of memory operation  is critical. First of all will be mastered the production of microcircuits PRAM of high density - from 512 Mbit. Samsung  assumed, that the growth of the flash disk density - memory will  went by present rates . At the horizon are  visible the memory maps   with a capacity of 64 Gb. The appearance of high-speed and more accessible flash- memory allow to enlarge its application in notebook, hdd and on motherboards. The appropriate technologies is already under development in Samsung, Seagate, Intel and some other producers. Related Products :

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