Yesterday the Japanese company elpida reported about the successful release of first two-gigabit DDR2 memory microcircuits for mobile devices with the use of lithographic technical process generation 40 nm and HKMG technology.
The thin layer of insulating material with the high value of dielectric constant is combined with the metallized lock, which decrease the currents leakage, increase the transistors operating speed and reduce energy consumption. Elpida company is first among competitors to overcome the specific technological difficulties, which interfere with using HKMG in the mass production of memory microcircuits. Innovation will substantially decrease the energy consumption of memory in the quiescent conditions, and also increase the operating speed of transistors by 1,7 times.
The models of LPDDR2 microcircuits with the use of HKMG, released on 40 nm technical process, will be accessible prior to the end of 2011 financial years. Subsequently elpida plans to scale this technology to the memory microcircuits, produced on 30 nm and 25 nm technical processes. Related Products :
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