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3D NAND Micron has helped us to successfully complete the quarter


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3D NAND Micron has helped us to successfully complete the quarter


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POSTER: computer news   ||   3D NAND MICRON HAS HELPED US TO SUCCESSFULLY COMPLETE THE QUARTER

DATE:2016-12-23

Micron Company First of December completed the first quarter of fiscal 2017 .  For the three months 2016 - September through November - the company raised $ 3.97 billion and a net profit of $ 180 million annual revenue growth in the quarter was 19%, while revenue for the quarter increased by 23%..  Losses in the preceding quarter reached $ 170 million, while the year-ago quarter, the company posted a net profit of $ 206 million. Demand for DRAM sequentially increased by 18%, and NAND-flash shipments rose 26%.  At the same time the memory of the average for the quarter increased by 5% .

One Micron success in recent months, we can assume that the company is slightly ahead of schedule launched the second generation of memory 3D NAND.  It is behind from , but  now reportedly has the industry's best production equipment for the production of multi-layer of NAND-flash and, in particular, the 64-layer TLC memory capacity of 768 Gbps.  It is engaged in production of chips completely remodeled Fab 10X factory in Singapore.  Production costs in terms of one bit in comparison with the first-generation 3D NAND reduced by 30%.  But this does not mean that there will be less expensive chips smaller capacity.  

It is interesting to note that Micron company uses a more sophisticated flash memory cell than the other, in particular - Samsung.  3D NAND Samsung cell uses a so-called charge trap or (CTF, charge trap).  Cell 3D NAND Micron - this structure with a floating gate.  Floating gate slightly better hold a charge, but increase the area of the cell and reduce the recording density.  

According to Micron management, in 2017 the production of the memory will not be able to catch up with demand, which will lead to an increase in procurement prices of DRAM and NAND.  So, in terms of capacity in 2017. DRAM production to grow by 15-20%, while the industry will require a growth of 20-25%.  NAND flash memory production in terms of the bits to increase by 30-40% in 2017, and buyers will demand growth of 40-45%.  


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Related news:

Western Digital Announces Memory Technology for 3D NAND with 4-Bit Cell (2017-07-26)
Intel 545s SSDs SM2259, TLC 3D V-NAND and capacities up to 2 terabytes (2017-06-30)
The production of 3D NAND is still a low-profit enterprise (2017-06-20)
The needs of the automotive market will brake the transition to 3D NAND (2017-06-13)
Toshiba XG5 - PCIe NVMe SSD on 3D Toshiba V-NAND from quarter of terabyte to terabyte (2017-05-29)
The Chinese promise to begin the release of the national 64-layer memory 3D NAND in 2019 (2017-05-10)
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For remote services, Intel announced two line of SSDs on 3D NAND memory (2017-05-07)
SK Hynix unveiled 72-layer 3D NAND, which will be launched in autumn (2017-04-11)
List of applicants for Toshibas NAND assets is shrinking (2017-04-08)
TSMC needs Toshiba Assets to access the memory technologies such as 3D NAND (2017-03-03)
Western Digital Corporation starts mass production of 64-layer 3D NAND memory capacity increased (2017-02-07)
SK Hynix will start to release 72-layer 3D NAND in the second quarter (2017-01-31)
Tsinghua Unigroup building in China is another plant for the production of DRAM and 3D NAND (2017-01-22)
3D NAND Micron has helped us to successfully complete the quarter (2016-12-23)
SK Hynix is ​​investing 2.7 billion in the expansion of DRAM- and NAND-memory production (2016-12-22)
Toshiba will build a new plant to increase the output of 3D NAND (2016-11-10)
SK Hynix is ​​almost ready for the 48-layer 3D NAND mass production (2016-11-09)
By the end of 2017 WDC will produce mainly 64-layer 3D NAND (2016-10-27)
Intel introduced a whole range of SSD memory 3D NAND (2016-08-27)

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