The last ten years, the manufacturers are switching to copper compound semiconductors. Prior to this, for such purposes unused aluminum. But copper is also close to the limit of their capabilities. The finer process technology, the higher the probability of formation of shells and the more intense the process of diffuse infiltration of copper into the dielectric - electromigration. As a result, the defect rate in the production increases, and decreases as the semiconductor lifetime. Recently, copper compounds was used to protect the barrier of tantalum and tantalum nitride (TaN / T). Applied Materials company offered to cover additional layer of cobalt copper connections. According to their estimates, cobalt layer on the order reduces the rate of electromigration of copper atoms in the material boundary. Individual partners note that the rate of electromigration in some cases was reduced by two .
Encapsulation of copper in cobalt company Applied Materials proposes to use its platform Endura Volta. This arrangement is already used for cleaning debris from the wafer after processing. The process of applying cobalt in two stages to increase the technological chain of steps required to process each wafer. However, increase in the reliability of electronic circuits compensate for the increase in cost.
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