International Technology Roadmap group for Semiconductors (ITRS), Estimates in 2028 the semiconductor industry will not be able to lower technological standards. We are talking about the technical process with the technological standards of less than 3 nm, which do not fit the traditional semiconductors. As one of the alternatives that can help reduce the size of transistor gates to the atomic level, promises to be a channel transistors from carbon nnotrubok.
Each nanotube is capable of passing a current of up to 15 mA. With tubes in parallel, you can create a transistor with a given amperage. The challenge is to learn to have carbon nanotubes in compact groups and aligned under the ticker. According to the developers at IBM, in the issues outlined progress. Created technical processes that enable self-aligning nanotubes .
Recently, IBM developers have overcome another barrier to channel transistors from nanotubes. Problematic node transistors which ceased scaled steel metal contacts at both ends of the channel. As the scale of production to reduce the contact area was reduced, leading to increased resistance in contact with the channel. A new way to connect a metallic conductor to the channel offered by IBM, will allow to produce transistors with the rules of up to 1.8 nm.
Chemical methods of nanotube ends are welded to the metal contacts. As the "solder" is used molybdenum. Welding temperature - 850 degrees Celsius. Prior to this conventional method, carbon nanotubes are deposited in vacuum on the silicon wafer. The results obtained in the experiment showed total resistance equal to 36 ohms. Related Products :
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