Rice University offered its version of the resistive memory

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POSTER: computer news   ||   RICE UNIVERSITY OFFERED ITS VERSION OF THE RESISTIVE MEMORY	DATE:2014-07-27
Resistive memory or ReRAM (RRAM) has a lot of options for practical implementation, although its overall design is quite simple and consists of two crossed electrodes, between which are localized areas (cells) with a controlled variable resistor.  Supplying current to the electrodes of different polarity can increase or decrease the resistance, thereby recording a cell specific bit of data.  Moreover, the resistance of the cell can generate a large number of gradations, which significantly increases the number stored in each data bit cell. Among other developers,  often occurs HP memristor  .  University group proposed to use as a dielectric between the control electrodes of specially treated silica.  During processing, dielectric acquires a porous structure, whereupon the surface is applied to both sides of the grid formed by the electrodes and the cell area.   Supply voltage to the electrodes causes the pores in front of the contact groups occurrence of crystalline conductive filaments.  From the magnitude of the current will depend on number of filaments, and therefore,  resulting in resistance of the small current in the read mode.  According to the developers, their version of ReRAM cell can record up to nine bits of data, which is a record of all existing options resistive memory.  The scientists also believe in 100-fold superiority developed ReRAM options in terms of increasing the number of write cycles.  Finally, the voltage value in the recording mode of only 2 volts, which is 13 times less than the voltage value in the case of competing designs. On the problem of creating an inexpensive and effective ReRAM memory group at Rice University has around five years.  At the same time there are reports that some of the non-volatile memory manufacturers interested in this particular technology.   Related Products :

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