Since 2001, some company called Nantero is looking for ways to create a non-volatile memory based on carbon nanotubes. More precisely, the developers are trying to create Nantero technical process that would produce semiconductor devices using nanotubes in the conventional CMOS process technology to the standard equipment and a set of traditional materials. To do this, you must solve two major issues. Firstly, the maximum clear composition of the nanotubes. Second, the composition is uniformly applied to the nanotube layer on a silicon wafer.
According to our colleagues from the website Tech Report, technology Nantero passed or passes a certain degree of skill on the seven factory of two of the five largest semiconductor manufacturers. The company does not seek to produce their own NRAM. It simply license to develop all interested producers. Unfortunately, even the potential proximity to the production does not allow management Nantero to name at least some terms that would have outlined time limits output to market trends.
We explain the principle of NRAM memory operation is that one of the control inputs of transistor element is created with a layer of nanotubes. The control voltage changes the orientation of the nanotubes, which leads to a change in the resistance of the layer. When the nanotubes are touching each other, the resistance tends to zero. When contact is lost, the resistance increases abruptly. Such a mechanism, according to the developer promises to virtually forever operate electronic device, in contrast to the limited number of write cycles in NAND-flash. According to calculations, the memory allows NRAM 10 12 degree rewrite cycles and 10 cycles of 15 degree reading.
Currently experienced NRAM chips produced using 20nm process technology class. The developers believe a promising issue volumetric 3D-layout NRAM promise to create a cell NRAM to record multiple bits of data (such as MLC). Reliability NRAM, by the way, has been tested in space. Related Products :
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