China promises to become the locomotive of production development on FD-SOI substrates

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POSTER: computer news   ||    CHINA PROMISES TO BECOME THE LOCOMOTIVE OF PRODUCTION DEVELOPMENT ON FD-SOI SUBSTRATES	DATE:2017-05-25
Yesterday, the authorities of the Chinese city  Chengdu, within the framework of cooperation with GlobalFoundries, announced an investment in the joint project of $ 100 million. This is part of the joint investment of more than $ 10 billion, which will be spent on the construction of a new semiconductor plant near Chengdu.  But this will not be an ordinary plant.  This enterprise along with the processing of ordinary "solid" 300-mm substrates will be able to produce chips on FD-SOI substrates.  Substrates FD-SOI, we recall, contain a very thin insulating layer of completely depleted silicon inside the silicon wafer. Due to the additional insulation, the leakage currents in the FD-SOI chips are reduced to values that on conventional plates can be achieved only with the use of 10 nm process technology and the FinFET of transistors.  This allows the release of 28/22 nm chips on FD-SOI plates, whose speed and power characteristics (consumption) are inferior to chips with 14/16 nm holes and FinFET transistors.  Simply put, without a significant increase in production costs, chips on FD-SOI plates open up the same opportunities as more expensive 14-nm FinFET solutions on monolithic plates. Problems with the wide use of FD-SOI are exactly two - this is the need for large initial investments and the interest of developers.  The latter includes the training of personnel: the publication of educational literature, the organization and implementation of training courses in training processes, the establishment of consulting centers and technical support.  In fact, it is necessary to create a design culture for producing solutions on FD-SOI plates.  Let's add, for chips on FD-SOI the convenient technology of giving of a food with displacement (body bias) is created.  The displacement can be direct and reverse with an amplitude of +/- 3 V. This technology allows to reduce the voltage of the gates of transistors and to save significantly on the power supply of the chips. As it turned out, only China can create a culture of design and production using FD-SOI plates.  China became the main consumer of semiconductors in the world.  Only in China is enough free money and an understanding of the prospects to invest in the creation of a broad infrastructure for raising production on FD-SOI plates.  The investments, which we mentioned at the beginning, were just the concrete investment of the Chengdu authorities in the creation of the FD-SOI infrastructure in the area of construction of the new GlobalFoundries plant in China.  This is the construction of facilities that will allow to attract consulting companies and designers to a specific production.  A kind of campus for promoting and popularizing technologies related to the release of solutions on plates with an insulator.  GlobalFoundries plant in Chengdu will be commissioned in early 2018.  In 2018, the company will start producing chips on monolithic plates.  The release of 22-nm chips on FD-SOI plates will start in 2019 (the 22FDX process technology).  A similar upgrade GlobalFoundries holds at the plant in Dresden.  The treatment of FD-SOI plates in Germany can begin a year earlier.  It is expected that the use of FD-SOI will provide a breakthrough in the production of chips with radio-frequency components (modems and the like), and will also become a Klondike for the release of things with an Internet connection.   Related Products :

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