|
Toshiba company showed its silicic plates with 300 millimeters diameter with 32- nm integrated microcircuits flash- memory (32 Gbit (4 Gb) volume each).
Memory cells in this case are based on the multilevel architecture, which allow to store up to 3 bits of information and allow to considerably increase the data writing speed. In this case there are no special differences from the 43- nm integrated microcircuits already produced by the company, according to official statements .
According to existing information, finished products will be released by the Japanese company during September 2009. However, the sales of 32- nm device are planned for 2010 or 2011. Related Products :
|