Samsung DDR3 30 nm

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POSTER: computer news   ||   SAMSUNG DDR3 30 NM	DATE:2010-07-22
Samsung company on this week began the mass production of  memory microcircuits DDR3 with the lowered energy consumption on technical process class 30 nm. This still does not mean that Samsung mastered directly 30 nm technical process, but we deal about the range 30-39. At the given moment, it mastered the release of DDR3 microcircuits with two Gbit density, on their base it is possible to create DDR 3-1866 memory modules with default voltage 1.35 v or memory modules DDR 3-2133 with voltage  1.5 v. the first will be used in servers, the second - in desktop systems. To the end of year samsung plan to arrange the release of microcircuits with four Gbit density, which will increase the volume of DDR3 registered module to 32 Gb, and the volume of memory modules for desktop computers and notebook rise up to eight Gb. Related Products :

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