After releasing the 22-nm processors Ivy Bridge, Intel has proven that vertical transistors with FinFET-structure are real. . Using FinFET-transistor GlobalFoundries company will produce 14-nm semiconductors , TSMC company - 16 nm, and UMC - 20 nm. The transition to 3D transistors structure is vital for the entire industry. According to the company, the transition to 14-nm process technology with the preservation of planar transistor structure does not allow to increase the frequency of operation and lower power consumption.
However, you probably will notice that in recent years, the transition to a new process did not give such a performance gain, as before? All because of a high level of parasitic leakage, which fought, for example, by passing on insulators with high dielectric constant. AMD company (GlobalFoundries) using SOI-wafer with an additional insulating layer, and in the next few years it will be switching to a thin substrate of FB-SOI fully depleted insulation. But all this does not give tangible effect. Only hardcore, believe in IBM, only 3D-transistors! The latter, by the way, inherent in such natural features as the ability to work with power near the threshold value (0.3-0.5 V).
FinFET transistors generate a lot of non-trivial problems. On one hand, the spread of the transistors parameters is smaller by reducing the coefficient of impurities level variation (RDF, random dopant fluctuations), but on the other hand, the production process will be playing the size of edges, leading to changes in the electrical characteristics of individual transistors. . With all the consequences and not very predictable consequences. Also, all this multi-dimensional structure leads to parasitic capacitance . All this should be taken into account in the design.
Clearly, IBM look clearly to problems with development of production on base of FinFET transistors. She has developed the appropriate process technology. For example, IBM has licensed production of FinFET UMC. Intel has started producing 14-nm processors, each of which will consist of FinFET transistors. Related Products :
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