TSMC is learning to produce arrays of memory ReRAM, built-in 16-nm FinFET processors

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POSTER: computer news   ||   TSMC IS LEARNING TO PRODUCE ARRAYS OF MEMORY RERAM, BUILT-IN 16-NM FINFET PROCESSORS	DATE:2015-10-24
In December, will be held the next conference International Electron Devices Meeting (IEDM), in which we will talk about future developments in the field of semiconductors.  Among other speakers, you can find developers who work closely with TSMC company .  One of the presentations will be dedicated to the production of non-volatile memory type ReRAM using a standard process technology with the norms of 16 nm and using FinFET transistors.   The traditional structure of the memory ReRAM -  crossed wires with a special semiconductor layer, which changes the resistance under the influence of an electric field (a layer saturated with ions of substances or ions derived from the layer).  Therefore, in general, the ReRAM memory is called - Cross-memory.  Experts from the National Taiwan University, Tsinghua offered structure of ReRAM,  unlike the structure of the logic within the 16-nm FinFET process technology.  This opens the way for the production of solutions with integrated memory type ReRAM.  And for the production of ReRAM memory array as part of the CPU or the GPU no additional photomask is  required - just a set of templates .   The unit cell of ReRAM in the representation of developers consists of three ribs.  One edge - a selector, the second - actually an element of a cell  hafnium oxide, connected to a word line.  The appointment of the third rib was not disclosed.  The size of such  cell in a 16-nm FinFET fabrication process is 265 nm x 285 nm, and its area is 0.07632 m.  The document describes the production capacity of 1 Kbit array.  All base material other than the material cells are a traditional set of transistors for manufacturing, including high-k-dielectric.  According to the developers, this memory shows excellent speed and other characteristics.   Related Products :

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