Semiconductors atomic scale another approach
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POSTER: computer news || SEMICONDUCTORS ATOMIC SCALE ANOTHER APPROACH |
DATE:2013-05-26 |
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Today there is little doubt that the future of electronics for thin-film structures. Below 5 nm process technology may not work with conventional silicon structures. The development team from North Carolina State University under the direction of Dr. Cao Linho reported about the progress in the creation of thin-film semiconductor structures with thickness of just one atom. This promises a translation of electronic components on a real atomic level. The scientists used an inexpensive semiconductor material such as molybdenum sulfide (MoS2). Trick was to grow a layer of the film strictly predetermined value. During the development of the technology turned out that soaking furnace partial sequence of a predetermined pressure (the transition from gaseous to solid state) and the total vapor pressure in the furnace (the transition from solid to gaseous state) can grow a semiconductor film having a thickness of one, two or more atoms . The process was completely manageable and could potentially cover a large area. In the experiments has been used 5-inch plate, but the developers have no doubt that the atomic film can cover a much larger area. | ||
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SEMICONDUCTORS ATOMIC SCALE ANOTHER APPROACH |
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