Toshiba NAND manufactured on 19-nanometer process technology second generation

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POSTER: computer news   ||   TOSHIBA NAND MANUFACTURED ON 19-NANOMETER PROCESS TECHNOLOGY SECOND GENERATION	DATE:2013-10-31
Toshiba has announced the start of production of embedded flash memory such as NAND, which use chips manufactured on 19-nanometer process technology second generation.  The modules comply with the requirements of JEDEC eMMC 5.0.  They are designed for use in a wide range of consumer electronics devices, including smartphones, tablets, and cameras.  Mass production of modules the company expects to begin in late November. The first will be utilized in the manufacture of modules  THGBMBG7D2KBAIL and THGBMBG8D4KBAIR , 16 and 32 GB respectively.  In addition, the planned release of the modules 4, 8, 64 and 128 GB.  The module 32 GB integrated four chips at 64 Gbps and a controller chip.  Dimensions of products are 11,5 x 13 x 1,0 mm, type - FBGA, pin number - 153. The modules are designed for supply voltage 2.7-3.6 V. Work in three configurations with different bus width - x1, x4, x8.  Sequential Write (during HS400) in the case of a module of 16 GB up to 90 MB / s, in the case of module 32 GB - 50 MB / s.  The maximum reading speed in both cases equal to the specified 270 MB / s. Related Products :

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