Within three years, Samsung promises to revolutionize SSD market

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POSTER: computer news   ||   WITHIN THREE YEARS, SAMSUNG PROMISES TO REVOLUTIONIZE SSD MARKET	DATE:2013-11-07
In summer this year Samsung has launched a three-dimensional flash 3D V-NAND MLC and solid-state drives based on it - Series SSD 3D V-NAND capacity of 480 GB and 960 GB.  Serial production, though, for sure, the volume of its relatively modest, it is the most interesting.   Competitors are not new.  All of them - Micron, Toshiba and SK Hynix - immediately reported that they also know how to produce 3D NAND.  I must say that Samsung in recent years, a little behind the competition in terms of reducing the scope of process technology for the production of NAND-flash.  This delay was not critical - a few nanometers within each generation.  Perhaps the company came to the conclusion that further technical processes to finish in the range of 10-20 nm, as it does, for example, Toshiba company , is not profitable, so that the production technology is cheaper to completely change.  As demonstrated by a slide presentation with Samsung, development costs planar process technology with lower standards required  the relative increase in capital expenditures at 45%, while the transition to the vertical structure pulls a 15% increase in the cost of upgrading the lines. We are not talking about packing a few crystals in a column using the through-type compounds TSVs, but a truly three-dimensional structure of a solid memory.  In the first phase Samsung Launches 24-layer 3D V-NAND MLC, and plans to increase the number of layers  up to 32 or more.  As for the release of 3D V-NAND old technical processes involved, the cost of production in the long term is significantly lower than the issue of NAND-flash with reduced regulations.  So, Samsung said about the possibility of the next three years to reduce the cost of SSD by 50%. Coupled with the use of NAND-flash with a three-bit cell is really promises rapid changes in the SSD market .  What is important, compared with planar NAND TLC Memory 3D V-NAND MLC has much better performance.  Due to the larger cell size and high density durability 3D V-NAND 10 times higher.  At this recording speed twice as fast as the consumption is less than 40%.   Related Products :

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