Micron Technology Company official press release said that together with Broadcom was able to improve a number of signal characteristics of DDR3 memory, which significantly raise the speed of this memory type . We are talking about a specific load in the form of processing of network packets with respect to 2-KB paging access. Network traffic volume grows, and there is an urgent need for more efficient use of existing channels, technology, and equipment.
The developers have made changes to these timings DDR3, as FAW and RDD. Each new generation of DDR memory worsened these parameters that led to the loss of pure capacity by 15-35%. The new memory Micron DDR3-2133 standard timings FAW was reduced from 35 ns to 30 ns for 2-KB pages. This has led to an improvement in throughput by 18%. In this paper, optimized memory tested with Network Processors Broadcom BCM88030, able to provide bandwidth packages at 200 Gbit / s. Currently, as reported in Micron, the company produces 2 and 4 Gbit DDR3 chips with reduced parameter FAW. Related Products :
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