Competition according to the norms of technical process for the production of DRAM and NAND-flash

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POSTER: computer news   ||   COMPETITION ACCORDING TO THE NORMS OF TECHNICAL PROCESS FOR THE PRODUCTION OF DRAM AND NAND-FLASH	DATE:2014-08-27
Analytical firm IC Insights presented visual compilation on the development of new technological processes schedules for major producers of computer DRAM and NAND-flash memory.   So, for now, all the companies were able to overpower the release NAND-flash chips with the norms of less than 20 nm and issue DRAM-memory with the rules of less than 30 nm.  A similar situation, but on a new level, expected in 2.5-3 years, when the "average" rate of process technology for the production of NAND-memory will be reduced to 12-10 nm, and process technologies for the production of DRAM fall below 20 nm.  It should be noted that 12-10 nm need not be taken literally.   This year, the production of NAND-flash mass was the release of 15-nm and 16-nm chips.  Samsung Company, as we see, slow down a bit with the transition to the more subtle rules 2D-chips.  In May of this year, Samsung has started mass production of 32-layer memory 3D V-NAND.  Issue 24-layer chip, which was launched a year ago - in August 2013, was quite limited.  Following Samsung's graphics are 3D NAND development company SK Hynix, Micron and Toshiba. The so-called memory Hybrid Memory Cube,  began producing Micron company , but in general - is the memory High Bandwidth Memory (HBM DRAM). Related Products :

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