Two years later, flash memory on nanotubes will become a reality

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POSTER: computer news   ||   TWO YEARS LATER, FLASH MEMORY ON NANOTUBES WILL BECOME A REALITY	DATE:2016-09-02
Recently, two Japanese companies  share interesting news.  Development company Fujitsu Semiconductor and contract manufacturer company Mie Fujitsu Semiconductor announced the acquisition of a license for the development and production of non-volatile memory on carbon nanotubes - NRAM. US company Nantero (Woburn, MA) is developing Memory NRAM for about 15 years .  By 2006 Nantero patented technology to use nanotubes in the process of manufacturing ICs using conventional CMOS process technology.  This application of nanotubes on the plate, removal of impurities and others.  By 2015, the company launched the production of memory technology licensing NRAM and at that time held the technology tests at the plants of two major chip manufacturers with a worldwide reputation.  One of these companies was Fujitsu. Fujitsu has received a license for commercial release NRAM memory using 55-nm process technology in the future will develop NRAM production within the 40-nm process technology.  To produce chips with smaller norms Fujitsu does not know how.    Fujitsu intends to launch itself NRAM release in two years, but only in the form of built-in memory LSIs.  After that it will be launched production of individual chips and related NRAM memory or storage.  The company has vast experience in the production of FeRAM memory, which it intends to move to the memory production NRAM.  Unlike FeRAM, NRAM memory promises a more dense placement of cells and better scaling when changing process technology. Among other advantages, we note NRAM record even for DRAM performance: switching speed of the cell from one state to another is 20 picoseconds, and write speed - 5 ns.  This NRAM cell consumes very little energy, stores data without the support of power and can withstand the number of rewrite cycles 10 to 11 degrees.  In practice - this is eternity.  According to the developers, conducted adaptation NRAM chips to create DDR4 memory modules.  It will be chips with 4-8 layers and a capacity from 8 to 32 Gbps.  Potentially, this memory can be replaced in the future DRAM and NAND-flash.  According Nantero leadership, the company has 12 clients who are interested in technology NRAM and some of them belong to the leaders of the semiconductor memory market. Briefly recall that NRAM cell - a mechanical switch, in which the toggle role carbon nanotubes.  Under the influence of the voltage control tube deform or tear and create a conductive circuit within the cell. Related Products :

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