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At the end of September samsung company declared about the accessibility of two-gigabit DDR- 3 microcircuits, produced on 50 nm technology. It is possible to use them for creating memory modules with 4 Gb volume , in this case the energy consumption level for the DDR 3-1333 regime is reduced by up to 40% in comparison with previous generation memory microcircuits .
On Tuesday samsung company reported that its 2 gigabit DDR- 3 microcircuits received a approval certificate from Intel, which allow to recommend these microcircuits for creating memory modules, which work with core i7. In this case Intel officially approved the memory modules DDR 3-1066.
Note that these samsung memory microcircuits can work with 1.35-1.5 v, for core i7 processors this possibility has a great significance. According to IDC data studies , in the following year DDR3 memory can compose up to 29% of the entire world , and up to 2011 it will engage up to 72% of the market. Related Products :
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