At the end of January Samsung company reported about the deliveries of DDR3 memory microcircuits with 4 Gbit density, produced on 50 nm technology. This memory allows to create register modules with volume up to 16Gb, and using two-chip layout the volume of memory module can be increased up to 32Gb. However, such microcircuits did not reach the production series .
Instead Samsung company yesterday declared about the deliveries of memory modules on the base of two-gigabit microcircuits DDR- 3, released on 50 nm technology. Among the 18 accessible configurations, we encountered register memory modules DDR 3-1066 with 16Gb volume, which use a two-chip layout.
Which is remarkable, these memory modules works with the default voltage 1.35 v. This allows to economize up to 20% of electric power in comparison with standard memory modules , which work with 1.5 v. Using new modules Samsung, allow to equip two-processor system with 192 Gb memory. Related Products :
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