Globalfoundries report about 22 nm success

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POSTER: computer news   ||   GLOBALFOUNDRIES REPORT ABOUT 22 NM SUCCESS	DATE:2009-06-17
On computex 2009 exhibition in the beginning of this month globalfoundries company showed the 28 nm models - silicic plates with SRAM memory microcircuits on the monolithic base layer. Orders for the production of chips on 28 nm technology will start in first half of the following year. Yesterday on the pages of globalfoundries appeared a new press release, which reports about the successes of company in the mastery of 22 nm technological process. In collaboration with IBM , globalfoundries company was able to decrease the equivalent thickness of oxide to the values, which allow to release transistors with metallic lock and materials with high dielectric constant value (high- k) on 22 nm technology. For maintaining the high accuracy of switching lock in the transistor equivalent thickness the layer high- k dielectric must decrease, but this will increase the currents leakage . IBM and Globalfoundries was able to overcome these barriers, which will allow to approach the production of semiconductor microcircuits on 22 nm technology, and also on thinner technological standards. As models were demonstrated metal-KSID semiconductor power transistors with  n- type and p- type channel, that possess the equivalent  oxide thickness 0,55 nm and 0,7 nm respectively. Globalfoundries orients 22 nm technical process to the production of micros-chip with low energy consumption levels, utilized in mobile devices. With time 22 nm technical process will be used for productive products like processors, chipset and video chips. Related Products :

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