IBM and Samsung have reported the development of 11-nm memory STT MRAM

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POSTER: computer news   ||   IBM AND SAMSUNG HAVE REPORTED THE DEVELOPMENT OF 11-NM MEMORY STT MRAM	DATE:2016-07-08
Yesterday, IBM celebrated its 20th anniversary in the development of the non-volatile recording method as magnetoresistive random access memory (MRAM).  The start was with the control unit via an electromagnetic field, and resulted in the creation of cell recording using the torque transmission electron spin - STT MRAM (spin-transfer torque MRAM).  During this time, IBM has collaborated with many companies.  The first experiments began with Motorola company .  Then there were Infineon, TDK,  and Micron.  By the end of development IBM researchers came up with Samsung's engineers, and the 20-year anniversary is celebrated on the stage close to the preparation of development to commercial launch. Completion of the translation memory production STT MRAM commercialization is expected in three years.  Processes optimization of materials and other engineering stuff now running.  The crucial achievement was the cell structure of the transfer from horizontal to vertical, with what may have helped the Samsung company, as the undisputed leader in the development of a multi-layer memory 3D NAND.  The prototype has a memory STT MRAM cell with a working part of 11 nm in diameter, and the first phase will be carried out using the 10-nm process technology. Experimental Study of memory performance suggests superior speed parameters at the level of 10 ns access rate.  This is much closer to the DRAM memory than the NAND-flash.  RAM in total non-volatile memory STT MRAM is no substitute, but as a built-in memory, the solution almost infinite resource to overwrite - it will be a breakthrough.   Depending on the direction of magnetic field with variable magnetisation zone cell will store a "0" or "1".  Writing a value, as already mentioned above, the effect occurs via electron tunneling junction with spin transfer zone in a variable magnetization.  Add, STT MRAM memory is also developing other companies, in particular - Toshiba company .  So IBM and Samsung may not be first to begin commercial production of STT MRAM.   Related Products :

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