A technology for creating transistors from graphene and silicon carbide

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POSTER: computer news   ||   A TECHNOLOGY FOR CREATING TRANSISTORS FROM GRAPHENE AND SILICON CARBIDE	DATE:2012-07-25
The miniaturization of silicon technology over the years become increasingly complex.  This is due, primarily, to progressive leakage within the chip - the unauthorized movement of electrons through transistors in the off state.  A joint team of physicists from Germany and Sweden, under the general direction of Heiko Weber , Professor Friedrich-Alexander University, offered their version of this problem, and it is connected with the use of graphene. Scientists have created an analog of field-effect transistor with some modifications.  Thus, the role of metal electrodes in it are thin strips of graphene, a connection to a semiconductor silicon carbide.  For the formation of transistor gate scientists used so-called Schottky barrie.  Accordingly, the strips of graphene that have such a relationship are the input and output transistor. The researchers conducted their work in a very large scale: each transistor has a size of 100 micrometers (100  thousand nanometers), and therefore to judge the frequency potential of these transistors, based on the prototype testing  results is impossible.  Nevertheless, we can conclude that the technology for creating graphene transistor was developed, and now it remains for corporations to create a real operating electronics.   Related Products :

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