Proposed another type of universal non-volatile memory

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POSTER: computer news   ||   PROPOSED ANOTHER TYPE OF UNIVERSAL NON-VOLATILE MEMORY	DATE:2014-12-25
GlobalFoundries company is working on non-volatile memory ST-MRAM. In limited quantities memory MRAM (magnetoresistive) already issued, but the recording density is poor.  Decent app for Android or iOS in such will not boot.  Not fit.  Memory ST-MRAM, above all, has a relatively low power consumption.  The information in the memory cell is transferred via the transfer of the electron spin currents are sufficiently small.  FeRAM memory at the same time abandoned since the mid-2000s. According to the group of scientists from Cornell University, in terms of low power memory based on interesting ferro electromagnets or multiferroic.  This material may contain crystals that both magnetic and electric ordering.  Change the state of the memory areas in such materials can be without current flow and voltage alone.  A rough analogy - is a capacitor with a constant voltage applied.  Thus, consumption of the new memory type promises to be smaller than in the case of ST-MRAM. Scientists claim that they have the necessary samples of thin-film materials of bismuth ferrite.  The only problem is that the material loses its properties after several switching state.   Related Products :

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