The technology stack package, outshining HMC or HBM

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POSTER: computer news   ||   THE TECHNOLOGY STACK PACKAGE, OUTSHINING HMC OR HBM	DATE:2015-10-01
Starting the production of memory type 3D V-NAND, Samsung has made a small revolution.    Recently, the company has admitted that it has been over a year since the start of 3D V-NAND production   (August 2013) as this production was profitable.  For months, the level of failure with the release of the multi-layer flash memory is 50%.  However, Samsung was able to increase the production of memory 3D V-NAND . Novati Technologies company is engaged in Tezzaron multilayer chips with the vertical joints of the order of 15 years or more.  It has something to show.  At an international conference SEMICON Europa 2015, which will be held from 6 to 8 October in Dresden, Novati company will combine 18-layer chip with two logical layers, 64-Gbit memory and an array of sensors.   According to the developer, the technology of vertical connections Novati more progressive than Micron, Samsung and SK Hynix company .  Vertical channels connect tungsten crystals on substrates with thickness of 20 microns and do not use interim dielectric inserts.   Company Novati  connected the crystal stack learned to have vertical channels with a density 60 times greater than that achieved, Micron and SK Hynix.  In fact, we are talking about the density of channels, like memory 3D V-NAND, but using individual crystals rather than a monolithic structure. The high density of vertical channels in the structure of the multi-chip stack of chips allow to simplify the wiring so that there is no need for a mass intermediate buffers and drivers.  Thus freeing the area can be used as useful transistors, and the transmission rate to increase up to 8 Tbit / s.   Related Products :

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