Samsung Electronics Company starts mass production of memory chips Universal Flash Storage 2.0 (UFS) volume 256 GB, which are designed for mobile devices, high-end segment. The new chips are built on 3D V-NAND technology, are able to offer a read speed of up to 850 MB / s and write speed of 260 MB / s, significantly outperforming the microSD card and the SSD-drives with a SATA 3.0 interface.
Note that the memory chips UFS 2.0 128 GB Samsung were presented in February last year, and the company used their smartphones Galaxy S6. But this year, most likely, the Korean manufacturer has not had time to finalize the chips and did not produce the flagship version of the Galaxy S7 with 256 GB of internal memory.
Samsung said the new chips in volume 256 GB will appear in the next generation of flagship smartphones. It also reported that the Korean company will release a device with a data memory chips this year, it is even possible that this will be the next member of the family Galaxy Note smartphones.
The manufacturer notes that the need for such a capacious chips fast memory increases with the popularity of mobile devices with high-resolution displays. It is also noted that with the advent of mobile devices c memory UFS 2.0 and USB 3.0 interface will significantly increase the data transfer rate between devices. Related Products :
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