China SMIC bring RRAM memory to the commercial level

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POSTER: computer news   ||   CHINA SMIC BRING RRAM MEMORY TO THE COMMERCIAL LEVEL	DATE:2016-03-15
In summer 2013 Crossbar company presented cohort of multiple developers RRAM memory (ReRAM) or resistive RAM  .  In contrast to the widely proven methods saturation depleted insulator layer in the RRAM cell oxygen atoms, Crossbar method involves creating a controlled and reversible amorphous silicon strands of silver ions.  Since cell Crossbar actual semiconductor manufacturing technology RRAM Crossbar is relatively easy to bear on modern CMOS-process technologies.  In 2016,  Crossbar company promised to start   licensing stage of RRAM technology to major producers of semiconductors. Recently, one of the world's largest contract semiconductors manufacturer   - the Chinese company Semiconductor Manufacturing International Corporation (SMIC) announced that it has concluded with the company Crossbar partnership agreement on the commercialization of resistive memory production  .  On the base of the license agreement, SMIC company is taken to produce RRAM to everyone in the form of built-in microprocessors and SoC-volatile memories.   RRAM units will be integrated into SoC processors within the 40-nm process technology.  The company expects that the superior performance of RRAM beneficial supplement in the form of solutions and SoC processors for wearable electronics, items with a connection to the Internet, smartphones, tablets and various automation. Until now experienced RRAM memory chips company Crossbar manufactured using 110-nm process technology and a three-layer structure of a capacity  up to 4 Mbps.  Tests showed that the RRAM memory array can be up to 20 times faster NAND-flash, up to 20 times more economical consumption and withstand 10 times the erase / write cycles.  RRAM Crossbar Memory may be organized as a one transistor cell and the resistance as well as a single n-transistor and the resistor (cells).  In the first case will be the highest access speed in the second - the highest recording density.  It will be interesting to know what are the characteristics of RRAM Crossbar blocks in 40nm design SMIC. Related Products :

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