At the end of this year Intel company will release solid-state disk with 600 Gb volume, competitors already propose SSD with 512 Gb volume. The second most important microcircuit's semiconductor producer, samsung company, yesterday declared about the delivery of the solid-state disk with 512 Gb volume, using DDR NAND memory.
Solid-state memory of this type possesses the synchronous interface, which allow to transfer information by both fronts of signal, which substantially increases the transmission speed. For example, Samsung SSD with 512 Gb volume declared the transmission speed 250 Mbyte(s)/s on reading operations and 220 Mbyte(s)/s on writing operations. For product on Samsung controller these are completely good indices. The access time was also substantially reduced.
SSD is produced on 30 nm technology using memory microcircuits with 32 gigabits density. It consumes as much electric power as slower and less capacious SSD with 256 Gb, volume based on 40 nm memory microcircuits. The energy-saving algorithms additionally increase the operation time of notebook by an hour and more. SSD is equipped with SATA-300 interface and support 256- bit coding on AES algorithm, and also TRIM function.