Samsung company frequently presents unique developments in the region of memory microcircuits. At present Samsung already builds plans about the global passage of production to the new microcircuits NAND flash- memory with 64 Gbit density, made according to the 20 nm technical process standards.
Furthermore, these are the first chips, which will begin to use MLC- cells memory together with the internal toggle DDR2 interface, which will considerably increase the information transmission speed . In such devices as solid-state disk, which are used in the most varied devices, this quality will be especially claimed. The interface toggle DDR2 allow to transfer information with speed up to 400 Mbit/s, which is approximately ten times faster than predecessors.
The new memory microcircuits will find their use in smart phone, tablets, SSD and other similar production, proposing in this case great capacity and operating speed. Related Products :
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