There is no need to mention once again all the benefits that can provide the use of graphene in the field of microelectronics. It leads to the creation of a small, high-performance computing, and graphene has the potential to become the replacement of silicon in the foreseeable future. It is natural that a large number of professionals around the world are working to address the application of this material. Associate note a progress made in this area by scientists from the University of Pennsylvania (USA).
A team of researchers led by Professor Materials Science and Engineering, Joshua Robinson has developed a way of placing and fixing of polyatomic boron nitride layer on layer of graphene the thickness of one or two atoms. According to the authors of the study, it will produce graphene transistors on a scale comparable with silicon, plates with a diameter of 75 to 300 millimeters. Previously, the creation of graphene transistors plates of this size is not possible, and the success of professionals from Pennsylvania is an important step towards their industrial production. Related Products :
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