Samsung is ready for mass production of 128-Gbit flash memory cell with a three-bit

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POSTER: computer news   ||   SAMSUNG IS READY FOR MASS PRODUCTION OF 128-GBIT FLASH MEMORY CELL WITH A THREE-BIT	DATE:2013-04-11
Samsung Electronics said that the era of consumer SSD with a capacity of more than 500 GB is not far off.  The high-capacity solid-state drives promise to begin with mass production of flash memory with the recording of three bits per cell - NAND TLC.  The mass production of these chips 128 Gb company intends to begin later this month.  According to an official press release from Samsung, memory NAND TLC will be produced using 10nm process technology class.  Unfortunately, Samsung no longer specify the exact number of technical process, but it  is certainly closer to the top mark (20 nm) .  By the way, Micron company  has recently started producing 20-nm NAND TLC, so Samsung is not too far behind from it. The new three-bit memory Samsung will be used for an embedded application for the release of flash cards, and for the production of solid-state drives. Interface chip 128-Gbit NAND TLC Samsung traditional - Asynchronous Toggle DDR 2.0 (400 Mbit / s).  The same interface is used by Toshiba company . We should also say that in recent months the demand for TLC-memory has grown considerably, although it is still cheaper than MLC-based storage density per unit area. Related Products :

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