U.S. scientists have proposed a multilayer transistor design

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POSTER: computer news   ||   U.S. SCIENTISTS HAVE PROPOSED A MULTILAYER TRANSISTOR DESIGN	DATE:2013-04-20
6 nm process technology is critical to the silicon since its further miniaturization is impossible.  It will be achieved, judging by the progress in lithography, 2020, and to further reduce the size of the transistor there is more promising alternatives.  Scientists at the center nanoelectric at Purdue University offered their material, which in the future will be able to replace silicon   According to their idea - material for transistors of the future will serve as a two-dimensional crystals of molybdenite disulfide belonging to a new class of semiconductors - di-halogenidam metals.  Two-dimensional crystals thickness is only 0.7 nanometers, or 3 atoms.  Transistor can be assembled from several layers of material as illustrated.   Related Products :

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