Standard memory GDDR5X developed in response to the growing demands on memory bandwidth from the graphic systems, game consoles, computers and network devices. Memory type HBM can not fully meet all the needs of consumers. It is expensive to produce, but in the second generation the capacity of individual chips seven times ahead of GDDR5 memory. Industry had to be something not so expensive, but faster than GDDR5. The solution was found in a partial change of the internal architecture of GDDR5 memory.
According to JEDEC, the memory GDDR5X signal POD-preserved structure of GDDR5 memory. This does not mean that the memory controllers will remain unchanged. They will have to remodel for compatibility with GDDR5X. However, the logic largely remained the same, which would facilitate the transition to a new type of memory. For HBM production must be changed almost everything and add the intermediate cycle. But performance when communicating with GDDR5X grow up to two times: from the current 7 Gbit / s per pin for GDDR5 to 10-14 Gb / s GDDR5X. Previously it was thought that the company Micron begin mass production of chips GDDR5X in the second half of this year.
Briefly, we recall the memory GDDR5X improve their performance due to the fact that it changed the architecture of data sampling circuits (prefetch). Memory GDDR5X per cycle can choose up to 64 bytes instead of 32 bytes in the GDDR5. The memory GDDR5X can operate in modes GDDR5. This allows the flexibility to change the performance of graphics cards, focusing efforts on the speed or efficiency. Related Products :
|