Samsung DDR- 3 with 4 Gbit density

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POSTER: computer news   ||   SAMSUNG DDR- 3 WITH 4 GBIT DENSITY	DATE:2009-01-29
Samsung company  today declared about the first in the world memory microcircuits DDR- 3 with 4 Gbit density, produced on 50 NM technology. The appearance of such microcircuits will allow to create registered DDR- 3 modules with  16 GB volume or non buffered modules with 8 GB volume. With the use of two-chip layout the memory module volume can be brought up to 32 GB. New memory from Samsung works with stress 1.35 v . Modules with 16 GB volume, for example, use of four-four-gigabit DDR- 3 microcircuits with this low voltage it is possible to reduce the energy consumption level by up to 40% in comparison with module, assembled from memory microcircuits with 2 Gbit density. The new Samsung memory can work in the regimes up to DDR 3-1600 . The memory modules on base of such microcircuits will be claimed in the server segment. Related Products :

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