One of the most promising ways to significantly raise the performance of storage system is the use of a resistive memory (ReRAM). This technology will find place in one of the next generation computing systems, but according to associate, the process of learning is far from final. Researchers at the University of Applied Sciences Julich Aachen (Germany) concluded that the cells are not ReRAM passive components, unlike hard disks and memory, but may generate a current and can be considered as microscopic cells.
In the course of complicated experiments took about 9 months , the researchers measured the voltage of different types of cells ReRAM and defined mechanisms of power generation. The results, accompanied by the clear demonstration that drive to revise the generally accepted concept of the passive nature of ReRAM elements .Group of researchers have patented the use of technology to improve the battery cells process of reading the data, making it better and fast. Related Products :
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