STT-RAM new IBM memory

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POSTER: computer news   ||   STT-RAM NEW IBM MEMORY	DATE:2007-08-20
We recently examined the development of memory energy-independent  technologies - this the so-called memory with the phase transition (PRAM). It was assumed that as competitor for PRAM can become the technology MRAM - magnetic- resistance memory, which is developed by IBM company . With the reference to IBM representatives , MRAM technology is sufficiently badly scaled within the promising technological processes; therefore IBM decided to conduct further developments in the sphere STT-RAM, which removes similar limitations. The name of memory STT-RAM contains the reduction of phrase spin torque transfer - transfer spin rotational moment. The rotational electrons moments are ordered . The change in direction of the magnetic field leads to a change in the resistance of element, which make the passage from the state 0 to the state 1. IBM is assembled to develop this technology together with TDK, the first prototypes must be released on 65 nm technical process in the next four years. It is necessary to say that technology STT-RAM is also developed by California company grandis, which is already ready to supply prototypes in this year. In comparison with MRAM technology ,  it possible not only to attain a increase in the density  of information writing, but also to reduce the energy consumption level  . If we compare PRAM and STT-RAM, the latter possesses higher operation speed , but the first is characterized by higher density. Furthermore, STT-RAM possess higher longevity in comparison with PRAM. STT-RAM memory can obtain application in future IBM developments and its partners ( as AMD) . In any case, the STT-RAM memory technology is located on early stage , therefore it's a bit early to speak about it.  Related Products :

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