Two years ago, GlobalFoundries company and Everspin Technologies company signed an agreement on the production of non-volatile memory chips such as ST-MRAM (Spin-Torque Magnetoresistive Random-Access Memory, magnetoresistive RAM transfer spin moment). Technology ST-MRAM cell structure presented by Everspin, production facilities and 40-nm process technology was organized by GlobalFoundries.
Memory ST-MRAM promises to withstand 1,000 times more write cycles than the NAND-flash memory, and is characterized by access speeds close to the speed of RAM. This partnership, in particular, led to the fact that in August of this year, the stocks came off GlobalFoundries densest chip industry ST-MRAM capacity of 256 Mbps with a DDR3 interface.
At the end of last week, GlobalFoundries and Everspin reported willingness to take new technological barrier. Technology of production of ST-MRAM will be adapted for the production of SoC and FPGA with built-in non-volatile memory (eMRAM) on FD-SOI wafers to the norms of 22 nm (22FDX). The individual memory chips ST-MRAM, recall, GlobalFoundries company produces on conventional plates using a 40-nm process technology.
The ability to produce built-ST-MRAM memory with the norms of 22 nm on a plate with a fully depleted insulator can be a real breakthrough in the industry. As volatile memory with the speed of the SRAM cell and one transistor, rather than 6-7 . However, it will be only in 2018. Prototypes client solutions with eMRAM appear on a year earlier - in 2017. It is expected that this will be a godsend for the scope of things with an Internet connection. By the way, it would be even better if the release eMRAM partners will be able to adapt to the submitted recently tehprotsessu 12FDX burrows with 12 nm on FD-SOI wafers.